PML260SN datasheet(5/12 Pages) PHILIPS

5 / 12 page

PML260SN_2

Product data sheet

Rev. 02 — 29 May 2006

5 of 12

Philips Semiconductors

PML260SN

N-channel TrenchMOS standard level FET

Characteristics

Table 5.

Characteristics

Tj =25 °C unless otherwise speciﬁed.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS drain-source breakdown

voltage

ID = 250 µA; VGS =0V

Tj =25 °C

200

Tj = −55 °C

178

VGS(th)

gate-source threshold voltage

ID = 1 mA; VDS =VGS; see Figure 9 and 10

Tj =25 °C

234V

Tj = 150 °C

1.2

Tj = −55 °C

4.4

IDSS

drain leakage current

VDS = 160 V; VGS =0V

Tj =25 °C

--1

µA

Tj = 150 °C

100

µA

IGSS

gate leakage current

VGS = ±20 V; VDS = 0 V

100

gate resistance

f = 1 MHz

0.6

Ω

RDSon

drain-source on-state

resistance

VGS = 10 V; ID = 2.6 A; see Figure 6 and 8

Tj =25 °C

250

294

Ω

Tj = 150 °C

550

647

Ω

VGS =6V; ID = 2.5 A

263

309

Ω

Dynamic characteristics

QG(tot)

total gate charge

ID = 2.6 A; VDS = 100 V; VGS =10V;

see Figure 11 and 12

13.3

QGS

gate-source charge

2.4

QGS1

pre-VGS(th) gate-source charge

1.15

QGS2

post-VGS(th) gate-source charge

1.25

QGD

gate-drain charge

4.2

VGS(pl)

gate-source plateau voltage

4.2

Ciss

input capacitance

VGS =0V; VDS = 30 V; f = 1 MHz;

see Figure 14

657

Coss

output capacitance

Crss

reverse transfer capacitance

td(on)

turn-on delay time

VDS = 100 V; RL = 100 Ω;VGS =10V;

RG = 5.6 Ω

-7

-ns

rise time

-11

td(off)

turn-off delay time

fall time

-7

-ns

Source-drain diode

VSD

source-drain voltage

IS = 3.2 A; VGS = 0 V; see Figure 13

0.8

1.2

trr

reverse recovery time

IS = 3.2 A; dIS/dt = −100 A/µs; VGS =0V;

VR = 120 V

101

recovered charge

267

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