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PML260SN Datasheet(PDF) 1 Page - NXP Semiconductors |
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PML260SN Datasheet(HTML) 1 Page - NXP Semiconductors |
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1 / 12 page  1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a surface-mounted plastic package using TrenchMOS technology. 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information PML260SN N-channel TrenchMOS standard level FET Rev. 02 — 29 May 2006 Product data sheet I Standard level threshold I Low profile and small footprint I Very low thermal impedance I Low on-state resistance I Primary side switching I DC-to-DC converters I Portable appliances I VDS ≤ 200 V I ID ≤ 8.8 A I RDSon ≤ 294 mΩ I QGD = 4.2 nC (typ) Table 1. Pinning Pin Description Simplified outline Symbol 1, 2, 3 source (S) SOT873-1 (HVSON8) 4 gate (G) 5, 6, 7, 8 drain (D) 1 234 8 765 Transparent top view S D G mbb076 |
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