PML260SN datasheet(2/12 Pages) PHILIPS

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PML260SN_2

Product data sheet

Rev. 02 — 29 May 2006

2 of 12

Philips Semiconductors

PML260SN

N-channel TrenchMOS standard level FET

Ordering information

Limiting values

Table 2.

Ordering information

Type number

Package

Name

Description

Version

PML260SN

HVSON8

plastic thermal enhanced very thin small outline package; no leads;

8 terminals; body 3.3

× 3.3 × 0.85 mm

SOT873-1

Table 3.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

VDS

drain-source voltage

°C ≤ T

j ≤ 150 °C

200

VGS

gate-source voltage

±20

drain current

Tmb =25 °C; VGS = 10 V; see Figure 2 and 3

8.8

Tmb = 100 °C; VGS = 10 V; see Figure 2

5.5

IDM

peak drain current

Tmb =25 °C; pulsed; tp ≤ 10 µs; see Figure 3

-15

Ptot

total power dissipation

Tmb =25 °C; see Figure 1

-50

Tstg

storage temperature

−55

+150

°C

junction temperature

−55

+150

°C

Source-drain diode

source current

Tmb =25 °C

8.8

ISM

peak source current

Tmb =25 °C; pulsed; tp ≤ 10 µs

Avalanche ruggedness

EDS(AL)S non-repetitive drain-source

avalanche energy

unclamped inductive load; ID = 3.5 A;

tp = 0.05 ms; VDS ≤ 200 V; RGS =50 Ω;

VGS = 10 V; starting at Tj =25 °C

-22

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