Nexperia

PEMZ7

NPN/PNP general purpose double transistor

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1] [2] -

-

416

K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Reflow soldering is the only recommended soldering method.

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor; for the PNP transistor with negative polarity

VCB = 15 V; IE = 0 A; Tamb = 25 °C

-

-

100

nA

ICBO

collector-base cut-off

current

VCB = 15 V; IE = 0 A; Tj = 150 °C

-

-

50

µA

IEBO

emitter-base cut-off

current

VEB = 5 V; IC = 0 A; Tamb = 25 °C

-

-

100

nA

hFE

DC current gain

VCE = 2 V; IC = 10 mA; Tamb = 25 °C

200

-

-

VCEsat

collector-emitter

saturation voltage

IC = 200 mA; IB = 10 mA; pulsed; tp ≤

300 µs; δ ≤ 0.02; Tamb = 25 °C

-

-

220

mV

Transistor 1 (NPN)

Cc

collector capacitance

VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz;

Tamb = 25 °C

-

4.4

6

pF

fT

transition frequency

VCE = 5 V; IC = 100 mA; f = 100 MHz;

Tamb = 25 °C

250

420

-

MHz

Transistor 2 (PNP)

Cc

collector capacitance

VCB = -10 V; IE = 0 A; ie = 0 A;

f = 1 MHz; Tamb = 25 °C

-

-

10

pF

fT

transition frequency

VCE = -5 V; IC = -100 mA; f = 100 MHz;

Tamb = 25 °C

100

280

-

MHz

PEMZ7

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Product data sheet

29 December 2022

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