PEMZ7

NPN/PNP general purpose double transistor

29 December 2022

Product data sheet

1. General description

NPN/PNP low VCEsat double transistor in a SOT666 ultra small and flat lead Surface-Mounted

Device (SMD)plastic package.

2. Features and benefits

• 300 mW total power dissipation

• Very small 1.6 x 1.2 mm ultra thin package

• Self alignment during soldering due to straight leads

• Low collector capacitance

• Low VCEsat

• High current capabilities

• Improved thermal behaviour due to flat leads

• Reduced required PCB area

• Reduced pick and place costs.

3. Applications

• Heavy duty battery powered equipment (telecom and audio-video) such as lamp drivers

• VCEsat critical applications such as latest low supply voltage IC applications

• All battery driven equipment, to save battery power

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor; for the PNP transistor with negative polarity

VCEO

collector-emitter

voltage

open base

-

-

12

V

IC

collector current

-

-

500

mA

hFE

DC current gain

VCE = 2 V; IC = 10 mA; Tamb = 25 °C

200

-

-