Nexperia

PEMZ7

NPN/PNP general purpose double transistor

5. Pinning information

Table 2. Pinning information

Pin

Symbol

Description

Simplified outline

Graphic symbol

1

E1

emitter TR1

2

B1

base TR1

3

C2

collector TR2

4

E2

emitter TR2

5

B2

base TR2

6

C1

collector TR1

1

2

3

4

5

6

SOT666

sym019

B1

E1

C2

B2

C1

TR1

TR2

E2

6. Ordering information

Table 3. Ordering information

Package

Type number

Name

Description

Version

PEMZ7

SOT666

plastic, surface-mounted package; 6 leads; 0.5 mm pitch;

1.6 mm x 1.2 mm x 0.55 mm body

SOT666

7. Marking

Table 4. Marking codes

Type number

Marking code

PEMZ7

Z7

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per transistor; for the PNP transistor with negative polarity

VCBO

collector-base voltage

open emitter

-

15

V

VCEO

collector-emitter voltage open base

-

12

V

VEBO

emitter-base voltage

open collector

-

6

V

IC

collector current

-

500

mA

ICM

peak collector current

-

1

A

IBM

peak base current

-

100

mA

Ptot

total power dissipation

Tamb ≤ 25 °C

[1]

-

200

mW

Per device

Ptot

total power dissipation

Tamb ≤ 25 °C

[1]

-

300

mW

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

-65

150

°C

Tstg

storage temperature

-65

150

°C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

PEMZ7

All information provided in this document is subject to legal disclaimers.

© Nexperia B.V. 2022. All rights reserved

Product data sheet

29 December 2022

2 / 10