BLF369 datasheet(4/13 Pages) PHILIPS

4 / 13 page

BLF369_2

Objective data sheet

Rev. 02 — 8 December 2006

4 of 13

NXP Semiconductors

BLF369

VHF power LDMOS transistor

7.1 Ruggedness in class-AB operation

The BLF369 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1

through all phases under the following conditions: VDS = 32 V; f = 225 MHz at rated load

power (PL(PEP) = 500 W).

VDS = 32 V; f = 225 MHz; IDq = 2 × 1.0 A; Th = 25 °C.

Fig 2.

CW power gain Gp and drain efﬁciency ηD as a function of output power PL; typical values

VDS = 32 V; f1 = 225 MHz; f2 = 225.1 MHz;

IDq =2 × 1.0 A; Th = 25 °C.

VDS = 32 V; f1 = 225 MHz; f2 = 225.1 MHz;

IDq =2 × 1.0 A; Th = 25 °C.

Fig 3.

2-Tone power gain Gp and drain efﬁciency ηD as

a function of peak envelope power PL(PEP);

typical values

Fig 4.

2-Tone third order intermodulation distortion

IMD3 as a function of peak envelope power

PL(PEP); typical values

PL (W)

500

400

200

300

100

001aae501

(dB)

ηD

(%)

ηD

PL(PEP) (W)

600

400

200

001aae502

(dB)

ηD

(%)

ηD

PL(PEP) (W)

600

400

200

001aae503

−40

−20

IMD3

(dBc)

−60

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