BLF369 datasheet(3/13 Pages) PHILIPS

3 / 13 page

BLF369_2

Objective data sheet

Rev. 02 — 8 December 2006

3 of 13

NXP Semiconductors

BLF369

VHF power LDMOS transistor

Characteristics

[1]

ID is the drain current.

[2]

Ciss and Coss include reverse transfer capacitance (Crss).

Application information

Table 6.

Characteristics

Tj =25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions[1]

Min

Typ

Max

Unit

V(BR)DSS

drain-source breakdown voltage

VGS =0V; ID =6mA

VGS(th)

gate-source threshold voltage

VDS = 20 V; ID = 600 mA

5.5

IDSS

drain leakage current

VGS =0V; VDS =32V

4.2

µA

IDSX

drain cut-off current

VGS =VGS(th) + 9 V; VDS = 10 V

100

IGSS

gate leakage current

VGS =20V; VDS =0V

gfs

forward transconductance

VGS =20V; ID =13A

RDS(on)

drain-source on-state resistance

VGS =VGS(th) + 9 V; ID =13A

Ω

Ciss

input capacitance

VGS = 0 V; VDS =32V; f=1MHz

[2] -

400

Coss

output capacitance

VGS = 0 V; VDS =32V; f=1MHz

[2] -

230

Crss

reverse transfer capacitance

VGS = 0 V; VDS = 32 V; f = 1 MHz

VGS = 0 V; f = 1 MHz.

Fig 1.

Output capacitance Coss as a function of drain-source voltage VDS; typical values

per section

VDS (V)

050

001aae484

200

400

600

Coss

(pF)

Table 7.

RF performance in a common-source 225 MHz test circuit

Th =25 °C unless otherwise speciﬁed.

Mode of operation

VDS

IDq

PL(PEP)

IMD3

∆G

(MHz)

(V)

(A)

(W)

(dB)

(%)

(dBc)

(dB)

2-tone, class AB

f1 = 225; f2 = 225.1

× 1.0

500

> 18

> 43

−24

BLF369 Datasheet(PDF) 3 Page - NXP Semiconductors

BLF369 Datasheet(HTML) 3 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

Datasheet Download

Link URL