BLF369 datasheet(1/13 Pages) PHILIPS

Part #	BLF369

Description	VHF power LDMOS transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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1.

Product proﬁle

1.1 General description

A 500 W LDMOS RF Power transistor for broadcast transmitter applications and industrial

applications in the HF/VHF band.

[1]

Th is the heatsink temperature.

1.2 Features

I Typical CW performance at 225 MHz, a drain-source voltage VDS of 32 V and a

quiescent drain current IDq = 2 × 1.0 A:

N Load power PL = 500 W

N Power gain Gp ≥ 18 dB

N Drain efﬁciency ηD =60%

I Advanced ﬂange material for optimum thermal behavior and reliability

I Excellent ruggedness

I High power gain

I Designed for broadband operation (HF/VHF band)

I Source on underside eliminates DC isolators, reducing common-mode inductance

I Easy power control

I Integrated ESD protection

1.3 Applications

I Communication transmitter applications in the UHF band

I Industrial applications in the UHF band

BLF369

VHF power LDMOS transistor

Rev. 02 — 8 December 2006

Objective data sheet

Table 1.

Typical performance

Typical RF performance at VDS = 32 V and Th =25 °C in a common-source 225 MHz test circuit.[1]

Mode of operation

f

PL

PL(PEP)

Gp

η

D

IMD3

(MHz)

(W)

(dB)

(%)

(dBc)

CW, class AB

225

500

-

18

60

-

2-tone, class AB

f1 = 225; f2 = 225.1

-

500

19

47

−28

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

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