Nexperia

74HC366; 74HCT366

Hex buffer/line driver; 3-state; inverting

Symbol Parameter

Conditions

Min

Typ Max Unit

Tamb = -40 °C to +125 °C

VIH

HIGH-level input voltage VCC = 4.5 V to 5.5 V

2.0

-

-

V

VIL

LOW-level input voltage

VCC = 4.5 V to 5.5 V

-

-

0.8 V

VI = VIH or VIL; VCC = 4.5 V

IO = -20 μA

4.4

-

-

V

VOH

HIGH-level output voltage

IO = -6.0 mA

3.7

-

-

V

VI = VIH or VIL; VCC = 4.5 V

IO = 20 μA

-

-

0.1 V

VOL

LOW-level output voltage

IO = 6.0 mA

-

-

0.4 V

II

input leakage current

VI = VCC or GND; VCC = 5.5 V

-

-

±1.0 μA

IOZ

OFF-state output current VI = VIH or VIL; VO = VCC or GND; VCC = 5.5 V

-

-

±10.0 μA

ICC

supply current

VI = VCC or GND; IO = 0 A; VCC = 5.5 V

-

-

160 μA

VI = VCC - 2.1 V; other inputs at VCC or GND; IO = 0 A

pins nA

-

-

490 μA

pin OE1

-

-

490 μA

ΔICC

additional supply current

pin OE2

-

-

441 μA

10. Dynamic characteristics

Table 8. Dynamic characteristics 74HC366

Voltages are referenced to GND (ground = 0 V); CL = 50 pF unless otherwise specified; see test circuit Fig. 8.

Symbol Parameter

Conditions

Min

Typ

Max Unit

Tamb = 25 °C

nA to nY; see Fig. 6

[1]

VCC = 2.0 V

-

33

100 ns

VCC = 4.5 V

-

12

20 ns

VCC = 5 V; CL = 15 pF

-

10

-

ns

tpd

propagation delay

VCC = 6.0 V

-

10

17 ns

OEn to nY; see Fig. 7

[2]

VCC = 2.0 V

-

44

150 ns

VCC = 4.5 V

-

16

30 ns

ten

enable time

VCC = 6.0 V

-

13

26 ns

OEn to nY; see Fig. 7

[3]

VCC = 2.0 V

-

55

150 ns

VCC = 4.5 V

-

20

30 ns

tdis

disable time

VCC = 6.0 V

-

16

26 ns

see Fig. 6

[4]

VCC = 2.0 V

-

14

60 ns

VCC = 4.5 V

-

5

12 ns

tt

transition time

VCC = 6.0 V

-

4

10 ns

CPD

power dissipation

capacitance

per buffer; VI = GND to VCC

[5]

-

30

-

pF

74HC_HCT366

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© Nexperia B.V. 2021. All rights reserved

Product data sheet

Rev. 6 — 17 February 2021

8 / 17