µPC358

3

Data Sheet G11765EJ6V0DS

µPC358G2(5)

ELECTRICAL CHARACTERISTICS (TA = 25

°C, V+ = +5 V, V– = GND)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Input Offset Voltage

VIO

RS = 0

Ω±2

±3mV

Input Offset Current

IIO

±5

±50

nA

Input Bias Current

Note 7

IB

45

60

nA

Large Signal Voltage Gain

AV

RL

≥ 2 kΩ

50

100

V/mA

Supply Current

Note 8

ICC

RL =

∞, IO = 0 A

0.7

0.9

mA

Common Mode Rejection Ratio

CMR

65

70

dB

Supply Voltage Rejection Ratio

SVR

65

100

dB

Output Voltage Swing

VO

RL = 2 k

Ω (Connect to GND)

0

V+ –1.5

V

Common Mode Input Voltage Range

VICM

0V+ –1.4

V

Output Current (SOURCE)

IO SOURCE

VIN+ = +1 V, VIN– = 0 V

30

40

mA

Output Current (SINK)

IO SINK

VIN– = +1 V, VIN+ = 0 V

15

20

mA

VIN– = +1 V, VIN+ = 0 V,

30

50

µA

VO = 200 mV

Channel Separation

f = 1 kHz to 20 kHz

120

dB

Notes 7. Input bias currents flow out from IC. Because each currents are base current of PNP-transistor on input

stage.

8. This current flows irrespective of the existence of use.