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NT5DS64M4AT NT5DS64M4AW
NT5DS32M8AT NT5DS32M8AW
256Mb Double Data Rate SDRAM
REV 1.1
12/2001
33
© NANYA TECHNOLOGY CORP. All rights reserved.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Write to Write (Burst Length = 4)
T1
T2
T3
T4
T5
T6
tDQSS (max)
Maximum DQSS
NOP
Write
NOP
NOP
NOP
Write
DI a-b = data in for bank a, column b, etc.
3 subsequent elements of data in are applied in the programmed order following DI a-b.
3 subsequent elements of data in are applied in the programmed order following DI a-n.
A non-interrupted burst is shown.
Each Write command may be to any bank.
CK
CK
Command
Address
DQS
DQ
DM
Don’t Care
T1
T2
T3
T4
T5
T6
Minimum DQSS
NOP
Write
NOP
NOP
NOP
Write
CK
CK
Command
Address
DQS
DQ
DM
BAa, COL b
BAa, COL n
BA, COL b
BA, COL n
tDQSS (min)
DI a-b
DI a-n
DI a-b
DI a-n
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