MA5104

1

DS3580-3.2

The MA5104 4k Static RAM is configured as 4096 x 1 bits and

manufactured using CMOS-SOS high performance, radiation hard,

3

µm technology.

The device has separate input and output terminals controlled by

Chip Select and Write Enable. The design uses a 6 transistor cell and

has full static operation with no clock or timing strobe required.

Address input buffers are deselected when Chip Select is in the HIGH

state.

FEATURES

s 3

µm CMOS-SOS Technology

s Latch-up Free

s Fast Access Time 90ns Typical

s Single 5V Supply

s Three State Output

s Low Standby Current 10

µA Typical

s -55

°C to +125°C Operation

s All Inputs and Outputs Fully TTL or CMOS

Compatible

s Fully Static Operation

MA5104

RADIATION HARD 4096 x 1 BIT STATIC RAM

Figure 2: Block Diagram

Operation Mode

CS

WE

I/O

Power

Read

L

H

D OUT

ISB1

Write

L

L

D IN

Standby

H

X

High Z

ISB2

Figure 1: Truth Table

APRIL 1995