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MAS5104FS Datasheet(PDF) 3 Page - Zarlink Semiconductor Inc |
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MAS5104FS Datasheet(HTML) 3 Page - Zarlink Semiconductor Inc |
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3 / 12 page  MA5104 2 Symbol Parameter Min. Max. Units VCC Supply Voltage -0.5 7 V VI Input Voltage -0.3 VDD+0.3 V TA Operating Temperature -55 125 °C TS Storage Temperature -65 150 °C Figure 3: Absolute Maximum Ratings Stresses above those listed may cause permanent damage to the device. This is a stress rating only and functlonal operation of the device at these condltions, or at any other condition above those indicated in the operations section of this specification, is not Implied Exposure to absolute maxlmum rating conditions for extended perlods may affect device reliability. Notes for Tables 4 and 5: 1. Characteristics apply to pre radiation at TA = -55°C to +125°C with VDD = 5V ±10% and to post 100k Rad(Si) total dose radiation at TA = 25°C with VDD = 5V ±10% (characteristics at higher radiation levels available on request). 2. Worst case at TA = +125°C, guaranteed but not tested at TA = -55°C. GROUP A SUBGROUPS 1, 2, 3. Symbol Parameter Conditions Min. Typ. Max. Units VDD Supply voltage - 4.5 5.0 5.5 V VlH Input High Voltage - VDD/2 - VDD V VlL Input Low Voltage - VSS - 0.8 V VOH Output High Voltage IOH1 = -1mA 2.4 - - V VOL Output Low Voltage IOL = 2mA - - 0.4 V ILI Input Leakage Current (note 2) All inputs except CS -- ±10 µA ILO Output Leakage Current (note 2) Output disabled, VOUT = VSS or VDD -- ±20 µA IPUI Input Pull-Up Current VIN = VSS on CS input only - - -100 µA IPDI Input Leakage Current VIN = VSS on CS input only - - 5 µA IDD Power Supply Current fRC = 1MHz, CS = 50% mark:space - 12 16 mA ISB1 Selected Supply Current CS = VSS -25 35 mA ISB2 Standby Supply Current Chip disabled - 50 3000 µA Figure 4: Electrical Characteristics Symbol Parameter Conditions Min. Typ. Max. Units VDR VCC for Data Retention CS = VDR 2.0 - - V IDDR Data Retention Current CS = VDR, VDR = 2.0V - 30 2000 µA Figure 5: Data Retention Characteristics CHARACTERISTICS AND RATINGS |
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