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STP120NF04 Datasheet(PDF) 3 Page - STMicroelectronics |
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STP120NF04 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 14 page ![]() STP120NF04 Electrical ratings 3/14 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 40 V VGS Gate-source voltage ± 20 V ID (1) 1. Current Limited by Package Drain current (continuous) at TC = 25°C 120 A ID Drain current (continuous) at TC = 100°C 120 A IDM (2) 2. Pulse width limited by safe operating area Drain current (pulsed) 480 A PTOT Total dissipation at TC = 25°C 300 W Derating factor 2 W/°C dv/dt(3) 3. ISD ≤120A, di/dt ≤300A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX. Peak diode recovery voltage slope 6 V/ns EAS (4) 4. Starting Tj = 25°C, Id = 60A, VDD=30 V Single pulse avalanche energy 1.2 J TJ Tstg Operating junction temperature Storage temperature -55 to 175 °C Table 2. Thermal data Rthj-case Thermal resistance junction-case Max 0.5 °C/W Rthj-pcb Thermal resistance junction-pcb Max see Figure 14. on page 8 °C/W Rthj-a Thermal resistance junction-ambient (free air) Max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C |
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