2SC5353 datasheet(2/4 Pages) UTC

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2SC5353

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R203-031,A

ABSOLUTE MAXIMUM RATING (Tc = 25℃)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

900

Collector-Emitter Voltage

VCEO

800

Emitter-Base Voltage

VEBO

Collector Current

Pulse

ICP

Base Current

Ta = 25℃

2.0

Collector Power Dissipation

TC = 25℃

Junction Temperature

+150

℃

Storage Temperature

TSTG

-40 ~ +150

℃

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Tc = 25℃)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector-Base Breakdown Voltage

BVCBO IC=1 mA, IE = 0

900

Collector-Emitter Breakdown Voltage

BVCEO IC=10 mA, IB = 0

800

Collector Cut-off Current

ICBO

VCB=720V, IE= 0

100

µA

Emitter Cut-off Current

IEBO

VEB=7V, IC= 0

µA

hFE(1)

VCE=5 V, IC=1 mA

DC Current Gain

hFE(2)

VCE=5 V, IC=0.15 A

Collector-Emitter Saturation Voltage

VCE(SAT) IC=1.2 A, IB=0.45 A

1.0

Base-Emitter Saturation Voltage

VBE(SAT) IC=1.2 A, IB=0.24 A

1.3

Rise time

0.7

Storage time

tSTG

4.0

Switching time

Fall time

20µS

Input

IB2

IB1

Output

VCC≈360V

IB1 = 0.24 A, IB2 = −0.48 A,

duty cycle ≤ 1%

0.5

µS

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