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BUT211 Datasheet(PDF) 5 Page - NXP Semiconductors

Part # BUT211
Description  Silicon Diffused Power Transistor
PDF  7 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUT211 Datasheet(HTML) 5 Page - NXP Semiconductors

  BUT211 Datasheet HTML 1Page - NXP Semiconductors BUT211 Datasheet HTML 2Page - NXP Semiconductors BUT211 Datasheet HTML 3Page - NXP Semiconductors BUT211 Datasheet HTML 4Page - NXP Semiconductors BUT211 Datasheet HTML 5Page - NXP Semiconductors BUT211 Datasheet HTML 6Page - NXP Semiconductors BUT211 Datasheet HTML 7Page - NXP Semiconductors  
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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT211
Fig.13. Typical DC current gain. h
FE = f(IC)
parameter V
CE
Fig.14. Forward bias safe operating area. T
mb = 25˚C
I
Region of permissible DC operation.
II
Extension for repetitive pulse operation.
NB:
Mounted with heatsink compound and
30
± 5 newton force on the centre of the
envelope.
Fig.15. Reverse bias safe operating area. T
j ≤ Tj max
Fig.16. Test circuit RBSOA. V
CC = 150 V; -VBB = 5 V
L
C = 200 µH; VCL ≤ 850 V; LB = 1 µH
0.01
1
100
10
1
0.1
10
h FE
IC / A
Tj = 25 C
Tj = 125 C
1V
5V
0
200
400
600
800
1000
6
5
4
3
2
1
0
IC / A
VCE / V
100
10
1
0.1
0.01
1
10
100
1000
IC / A
VCE / V
tp =
10 us
100 us
500 us
2 ms
10 ms
DC
ICMmax
ICmax
I
II
= 0.01
LB
IBon
-VBB
LC
T.U.T.
VCC
VCL
March 1996
5
Rev 1.100



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