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BUT211 Datasheet(PDF) 5 Page - NXP Semiconductors |
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BUT211 Datasheet(HTML) 5 Page - NXP Semiconductors |
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5 / 7 page ![]() Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211 Fig.13. Typical DC current gain. h FE = f(IC) parameter V CE Fig.14. Forward bias safe operating area. T mb = 25˚C I Region of permissible DC operation. II Extension for repetitive pulse operation. NB: Mounted with heatsink compound and 30 ± 5 newton force on the centre of the envelope. Fig.15. Reverse bias safe operating area. T j ≤ Tj max Fig.16. Test circuit RBSOA. V CC = 150 V; -VBB = 5 V L C = 200 µH; VCL ≤ 850 V; LB = 1 µH 0.01 1 100 10 1 0.1 10 h FE IC / A Tj = 25 C Tj = 125 C 1V 5V 0 200 400 600 800 1000 6 5 4 3 2 1 0 IC / A VCE / V 100 10 1 0.1 0.01 1 10 100 1000 IC / A VCE / V tp = 10 us 100 us 500 us 2 ms 10 ms DC ICMmax ICmax I II = 0.01 LB IBon -VBB LC T.U.T. VCC VCL March 1996 5 Rev 1.100 |
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