Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUT211

Fig.7. Normalised power dissipation.

PD% = 100

⋅PD/PD

Fig.8. Transient thermal impedance.

Z

Fig.9. Typical base-emitter saturation voltage.

V

Fig.10. Typical collector-emitter saturation voltage.

V

Fig.11. Typical base-emitter saturation voltage.

V

Fig.12. Typical collector-emitter saturation voltage.

V

0

20

40

60

80

100

120

140

Tmb / C

PD%

Normalised Power Derating

120

110

100

90

80

70

60

50

40

30

20

10

0

0.1

1

10

1

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

VCEsat / V

IC / A

Tj = 25 C

Tj = 125 C

IC/IB=

12

10

8

1E-06

1E-04

1E-02

1E+00

t / s

Zth / (K/W)

10

1

0.1

0.01

0

0.5

0.2

0.1

0.05

0.02

D =

tp

T

T

P

t

D

D=

0

0.4

0.8

1.2

1.6

2

2.4

1.2

1.1

1

0.9

0.8

0.7

0.6

VBEsat / V

IB / A

Tj = 25 C

Tj = 125 C

IC =

5A

3A

2A

0.1

1

10

1.2

1.1

1

0.9

0.8

0.7

0.6

0.5

0.4

VBEsat / V

IC / A

Tj = 125 C

Tj = 25 C

IC/IB=

8

10

12

0.1

1

10

10

1

0.1

VCEsat / V

IB / A

Tj = 25 C

Tj = 125 C

IC=2A

3A

5A

March 1996

4

Rev 1.100