BUW13AF datasheet(2/16 Pages) PHILIPS

2 / 16 page

1997 Aug 13

Philips Semiconductors

Product speciﬁcation

Silicon diffused power transistors

BUW13F; BUW13AF

DESCRIPTION

High-voltage, high-speed,

glass-passivated NPN power

transistor in a SOT199 package.

APPLICATIONS

• Converters

• Inverters

• Switching regulators

• Motor control systems.

PINNING

DESCRIPTION

base

collector

emitter

mounting base;

electrically isolated

ook, halfpage

123

MSB012

Front view

Fig.1 Simplified outline (SOT199) and symbol.

handbook, halfpage

MBB008

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

VCESM

collector-emitter peak voltage

VBE =0

BUW13F

850

BUW13AF

1000

VCEO

collector-emitter voltage

open base

BUW13F

400

BUW13AF

450

VCEsat

collector-emitter saturation voltage

see Figs 8 and 10

1.5

ICsat

collector saturation current

BUW13F

BUW13AF

collector current (DC)

see Figs 3 and 4

ICM

collector current (peak value)

tp < 20 ms; see Fig 4

Ptot

total power dissipation

Th ≤ 25 °C; see Fig.2

fall time

resistive load; see Fig.13

0.8

µs

BUW13AF Datasheet(PDF) 2 Page - NXP Semiconductors

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