BUW13AF datasheet(4/16 Pages) PHILIPS

4 / 16 page

1997 Aug 13

Philips Semiconductors

Product speciﬁcation

Silicon diffused power transistors

BUW13F; BUW13AF

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VCEOsust

collector-emitter sustaining voltage IC = 100 mA; IBoff =0;

L = 25 mH; see Figs 6 and 7

BUW13F

400

−−

BUW13AF

450

−−

VCEsat

collector-emitter saturation voltage

BUW13F

IC = 10 A; IB = 2 A; see

Figs 8 and 10

−−

1.5

BUW13AF

IC = 8 A; IB = 1.6 A; see

Figs 8 and 10

−−

1.5

VBEsat

base-emitter saturation voltage

BUW13F

IC = 10 A; IB = 2 A; see Fig.8 −−

1.6

BUW13AF

IC = 8 A; IB = 1.6 A;

see Fig.8

−−

1.6

ICsat

collector saturation current

VCE = 1.5 V

BUW13F

−−

BUW13AF

−−

ICES

collector-emitter cut-off current

VCE =VCESMmax; VBE =0;

note 1

−−

1mA

VCE =VCESMmax; VBE =0;

Tj = 125 °C; note 1

−−

4mA

IEBO

emitter-base cut-off current

VEB =9V; IC =0

−−

hFE

DC current gain

VCE =5V; IC = 20 mA;

see Fig.11

VCE =5V; IC = 1.5 A;

see Fig.11

Switching times resistive load (see Figs 12 and 13)

ton

turn-on time

BUW13F

ICon = 10 A; IBon =IBoff =2A

−−

µs

BUW13AF

ICon = 8 A; IBon =IBoff = 1.6 A −−

µs

storage time

BUW13F

ICon = 10 A; IBon =IBoff =2A

−−

µs

BUW13AF

ICon = 8 A; IBon =IBoff = 1.6 A −−

µs

fall time

BUW13F

ICon = 10 A; IBon =IBoff =2A

−−

0.8

µs

BUW13AF

ICon = 8 A; IBon =IBoff = 1.6 A −−

0.8

µs

Switching times inductive load (see Figs 14 and 15)

storage time

BUW13F

ICon = 10 A; IB =2A;

VCL = 250 V; Tc = 100 °C

−

2.8

3.5

µs

BUW13AF

ICon = 8 A; IB = 1.6 A;

VCL = 300 V; Tc = 100 °C

−

2.8

3.5

µs

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