Philips Semiconductors

Product specification

Rectifier diodes

BYQ30E, BYQ30EB, BYQ30ED series

ultrafast, rugged

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Low forward volt drop

V

• Fast switching

• Soft recovery characteristic

V

• Reverse surge capability

• High thermal cycling performance

I

• Low thermal resistance

I

t

GENERAL DESCRIPTION

Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power

supplies.

The BYQ30E series is supplied in the SOT78 conventional leaded package.

The BYQ30EB series is supplied in the SOT404 surface mounting package.

The BYQ30ED series is supplied in the SOT428 surface mounting package.

PINNING

SOT78 (TO220AB)

SOT404

SOT428

PIN

DESCRIPTION

1

anode 1

2

cathode

1

3

anode 2

tab

cathode

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

BYQ30E/ BYQ30EB/ BYQ30ED

-150

-200

V

RRM

Peak repetitive reverse

-

150

200

V

voltage

V

RWM

Working peak reverse

-

150

200

V

voltage

V

R

Continuous reverse voltage

-

150

200

V

I

O(AV)

Average rectified output

square wave;

δ = 0.5; T

-

16

A

current (both diodes

conducting)

I

FRM

Repetitive peak forward

square wave;

δ = 0.5; T

-

16

A

current per diode

I

FSM

Non-repetitive peak forward

t = 10 ms

-

80

A

current per diode

t = 8.3 ms

-

88

A

sinusoidal; with reapplied V

RRM(max)

I

RRM

Peak repetitive reverse

t

-

0.2

A

surge current per diode

I

RSM

Peak non-repetitive reverse

t

-

0.2

A

surge current per diode

T

j

Operating junction

-

150

˚C

temperature

T

stg

Storage temperature

- 40

150

˚C

1. It is not possible to make connection to pin 2 of the SOT428 or SOT404 packages.

k

a1

a2

13

2

1

2

3

tab

13

tab

2

12 3

tab

October 1998

1

Rev 1.200