BYQ30EB datasheet(2/8 Pages) PHILIPS

2 / 8 page

Philips Semiconductors

Product specification

Rectifier diodes

BYQ30E, BYQ30EB, BYQ30ED series

ultrafast, rugged

ESD LIMITING VALUE

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Electrostatic discharge

Human body model;

capacitor voltage

C = 250 pF; R = 1.5 k

Ω

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

th j-mb

Thermal resistance junction

per diode

K/W

to mounting base

both diodes

2.5

K/W

th j-a

Thermal resistance junction

SOT78 package, in free air

K/W

to ambient

SOT404 and SOT428 packages, pcb

K/W

mounted, minimum footprint, FR4 board

ELECTRICAL CHARACTERISTICS

All characteristics are per diode at T

j = 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

Forward voltage

F = 8 A; Tj = 150˚C

0.84

0.95

F = 16 A; Tj = 150˚C

1.15

F = 16 A

1.12

1.25

Reverse current

R = VRWM

-4

µA

R = VRWM; Tj = 100˚C

0.3

0.6

Reverse recovered charge

F = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs-

rr1

Reverse recovery time

F = 1 A; VR ≥ 30 V; -dIF/dt = 100 A/µs20

rr2

Reverse recovery time

F = 0.5 A to IR = 1 A; Irec = 0.25 A

Forward recovery voltage

F = 1 A; dIF/dt = 10 A/µs-

October 1998

Rev 1.200

BYQ30EB Datasheet(PDF) 2 Page - NXP Semiconductors

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