BYQ30EB datasheet(3/8 Pages) PHILIPS

3 / 8 page

Philips Semiconductors

Product specification

Rectifier diodes

BYQ30E, BYQ30EB, BYQ30ED series

ultrafast, rugged

Fig.1. Definition of t

rr1, Qs and Irrm

Fig.2. Definition of V

Fig.3. Maximum forward dissipation P

F = f(IF(AV)) per

diode; square current waveform where

F(AV) =IF(RMS) x √D.

Fig.4. Circuit schematic for t

rr2

Fig.5. Definition of t

rr2

Fig.6. Maximum forward dissipation P

F = f(IF(AV)) per

diode; sinusoidal current waveform where a = form

factor = I

F(RMS) / IF(AV).

100%

10%

time

rrm

shunt

Current

to ’scope

D.U.T.

Voltage Pulse Source

time

V F

I = 1A

rec

= 0.25A

trr2

0.5A

02468

0.5

0.2

0.1

BYQ30

Rs = 0.025 Ohms

Vo = 0.75 V

Average forward current, IF(AV) (A)

Forward dissipation, PF (W)

Tmb(max) / C

150

144

138

132

126

120

114

D = 1.0

D =

a = 1.57

1.9

2.2

2.8

BYQ30

Rs 0.025 Ohms

Vo = 0.75 V

Average forward current, IF(AV) (A)

Forward dissipation, PF (W)

Tmb(max) / C

150

144

138

132

126

120

114

October 1998

Rev 1.200

BYQ30EB Datasheet(PDF) 3 Page - NXP Semiconductors

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