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BYR29 Datasheet(PDF) 1 Page - NXP Semiconductors |
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BYR29 Datasheet(HTML) 1 Page - NXP Semiconductors |
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1 / 5 page ![]() Philips Semiconductors Product specification Rectifier diodes BYR29 series ultrafast FEATURES SYMBOL QUICK REFERENCE DATA • Low forward volt drop V R = 500 V/ 600 V/ 700 V / • Fast switching 800 V • Soft recovery characteristic • Reverse surge capability V F ≤ 1.5 V • High thermal cycling performance • Low thermal resistance I F(AV) = 8 A t rr ≤ 75 ns GENERAL DESCRIPTION PINNING SOD59 (TO220AC) Ultra-fast, epitaxial rectifier diodes PIN DESCRIPTION intended for use as output rectifiers in high frequency switched mode 1 cathode power supplies. 2 anode The BYR29 series is supplied in the conventional leaded SOD59 tab cathode (TO220AC) package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT BYR29 -500 -600 -700 -800 V RRM Peak repetitive reverse voltage - 500 600 700 800 V V RWM Crest working reverse voltage - 500 600 700 800 V V R Continuous reverse voltage - 500 600 700 800 V I F(AV) Average forward current 1 square wave; - 8 A δ = 0.5; T mb ≤ 115 ˚C I FRM Repetitive peak forward current t = 25 µs; δ = 0.5; - 16 A T mb ≤ 115 ˚C I FSM Non-repetitive peak forward t = 10 ms - 60 A current t = 8.3 ms - 66 A sinusoidal; with reapplied V RRM(max) T stg Storage temperature -40 150 ˚C T j Operating junction temperature - 150 ˚C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance junction to - - 2.5 K/W mounting base R th j-a Thermal resistance junction to in free air. - 60 - K/W ambient k a 12 1 tab 2 1 Neglecting switching and reverse current losses September 1998 1 Rev 1.300 |
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