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BYR29 Datasheet(PDF) 2 Page - NXP Semiconductors

Part # BYR29
Description  Rectifier diodes ultrafast
PDF  5 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYR29 Datasheet(HTML) 2 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
Rectifier diodes
BYR29 series
ultrafast
ELECTRICAL CHARACTERISTICS
T
j = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
Forward voltage
I
F = 8 A; Tj = 150˚C
-
1.07
1.50
V
I
F = 20 A
-
1.75
1.95
V
I
R
Reverse current
V
R = VRRM
-
1.0
10
µA
V
R = VRRM; Tj = 100 ˚C
-
0.1
0.2
mA
Q
s
Reverse recovery charge
I
F = 2 A to VR ≥ 30 V;
-
150
200
nC
dI
F/dt = 20 A/µs
t
rr
Reverse recovery time
I
F = 1 A to VR ≥ 30 V;
-
60
75
ns
dI
F/dt = 100 A/µs
I
rrm
Peak reverse recovery current
I
F = 10 A to VR ≥ 30 V;
-
-
6
A
dI
F/dt = 50 A/µs; Tj = 100 ˚C
V
fr
Forward recovery voltage
I
F = 10 A; dIF/dt = 10 A/µs
-
5.0
-
V
Fig.1. Definition of t
rr, Qs and Irrm
Fig.2. Definition of V
fr
Fig.3. Maximum forward dissipation P
F = f(IF(AV));
square wave where I
F(AV) =IF(RMS) x √D.
Fig.4. Maximum forward dissipation P
F = f(IF(AV));
sinusoidal current waveform where a = form
factor = I
F(RMS) / IF(AV).
Q
s
100%
10%
time
dI
dt
F
I
R
I
F
I
rrm
t
rr
02
468
10
12
0
5
10
15
20
D = 1.0
0.5
0.2
0.1
BYR29
IF(AV) / A
PF / W
Tmb(max) / C
150
137.5
125
100
112.5
Vo = 1.26 V
Rs = 0.03 Ohms
D =
tp
tp
T
T
t
I
time
time
V F
V
fr
V F
I
F
0
123
45
67
8
0
5
10
15
a = 1.57
1.9
2.2
2.8
4
BYR29
IF(AV) / A
PF / W
Tmb(max) / C
150
130
140
120
Vo = 1.26 V
Rs = 0.03 Ohms
September 1998
2
Rev 1.300



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