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BYR29 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BYR29 Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 5 page ![]() Philips Semiconductors Product specification Rectifier diodes BYR29 series ultrafast ELECTRICAL CHARACTERISTICS T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V F Forward voltage I F = 8 A; Tj = 150˚C - 1.07 1.50 V I F = 20 A - 1.75 1.95 V I R Reverse current V R = VRRM - 1.0 10 µA V R = VRRM; Tj = 100 ˚C - 0.1 0.2 mA Q s Reverse recovery charge I F = 2 A to VR ≥ 30 V; - 150 200 nC dI F/dt = 20 A/µs t rr Reverse recovery time I F = 1 A to VR ≥ 30 V; - 60 75 ns dI F/dt = 100 A/µs I rrm Peak reverse recovery current I F = 10 A to VR ≥ 30 V; - - 6 A dI F/dt = 50 A/µs; Tj = 100 ˚C V fr Forward recovery voltage I F = 10 A; dIF/dt = 10 A/µs - 5.0 - V Fig.1. Definition of t rr, Qs and Irrm Fig.2. Definition of V fr Fig.3. Maximum forward dissipation P F = f(IF(AV)); square wave where I F(AV) =IF(RMS) x √D. Fig.4. Maximum forward dissipation P F = f(IF(AV)); sinusoidal current waveform where a = form factor = I F(RMS) / IF(AV). Q s 100% 10% time dI dt F I R I F I rrm t rr 02 468 10 12 0 5 10 15 20 D = 1.0 0.5 0.2 0.1 BYR29 IF(AV) / A PF / W Tmb(max) / C 150 137.5 125 100 112.5 Vo = 1.26 V Rs = 0.03 Ohms D = tp tp T T t I time time V F V fr V F I F 0 123 45 67 8 0 5 10 15 a = 1.57 1.9 2.2 2.8 4 BYR29 IF(AV) / A PF / W Tmb(max) / C 150 130 140 120 Vo = 1.26 V Rs = 0.03 Ohms September 1998 2 Rev 1.300 |
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