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BYR29F Datasheet(PDF) 4 Page - NXP Semiconductors |
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BYR29F Datasheet(HTML) 4 Page - NXP Semiconductors |
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4 / 6 page ![]() Philips Semiconductors Product specification Rectifier diodes BYR29F series ultrafast Fig.7. Maximum I rrm at Tj = 25˚C and 100˚C. Fig.8. Typical and maximum forward characteristic I F = f(VF); parameter Tj Fig.9. Maximum Q s at Tj = 25˚C Fig.10. Transient thermal impedance Z th = f(tp) 10 1 0.1 0.01 Irrm / A 1 10 100 -dIF/dt (A/us) IF=1A IF=10A Tj = 25 C Tj = 100 C 1.0 10 100 -dIF/dt (A/us) 10 100 1000 Qs / nC 2 A IF = 10A 0 0.5 1 1.5 2 2.5 3 0 5 10 15 20 25 30 BYR29 VF / V IF / A max typ Tj = 25 C Tj = 150 C 1us 10us 100us 1ms 10ms 100ms 1s 10s 0.001 0.01 0.1 1 10 BYV29F pulse width, tp (s) Transient thermal impedance, Zth j-hs (K/W) D = tp tp T T P t D September 1998 4 Rev 1.400 |
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