BYT28 datasheet(2/5 Pages) PHILIPS

2 / 5 page

Philips Semiconductors

Product specification

Dual rectifier diodes

BYT28 series

ultrafast

ELECTRICAL CHARACTERISTICS

characteristics are per diode at T

j = 25 ˚C unless otherwise stated

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Forward voltage

F = 5 A; Tj = 150˚C

0.95

1.05

F = 10 A

1.30

1.40

Reverse current

R = VRRM

2.0

µA

R = VRRM; Tj = 100 ˚C

200

µA

Reverse recovery charge

F = 2 A to VR ≥ 30 V;

F/dt = 20 A/µs

Reverse recovery time

F = 1 A to VR ≥ 30 V;

F/dt = 100 A/µs

rrm

Peak reverse recovery current

F = 5 A to VR ≥ 30 V;

2.0

3.0

F/dt = 50 A/µs; Tj = 100˚C

Forward recovery voltage

F = 1 A; dIF/dt = 10 A/µs

2.5

Fig.1. Definition of t

rr, Qs and Irrm

Fig.2. Definition of V

Fig.3. Maximum forward dissipation P

F = f(IF(AV)) per

diode; square wave where I

F(AV) =IF(RMS) x √D.

Fig.4. Maximum forward dissipation P

F = f(IF(AV)) per

diode; sinusoidal current waveform where a = form

factor = I

F(RMS) / IF(AV).

100%

10%

time

rrm

456

D = 1.0

0.5

0.2

0.1

BYT28

IF(AV) / A

PF / W

Rs = 0.021 Ohms

Vo = 0.945 V

Tmb(max) / C

150

145.5

141

132

123

114

136.5

127.5

118.5

109.5

D =

time

V F

234

a = 1.57

1.9

2.2

2.8

BYT28

IF(AV) / A

PF / W

Tmb(max) / C

150

145.5

141

132

136.5

127.5

123

Vo = 0.945 V

Rs = 0.021 Ohms

October 1998

Rev 1.400

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