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BYT28 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BYT28 Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 5 page ![]() Philips Semiconductors Product specification Dual rectifier diodes BYT28 series ultrafast Fig.5. Maximum t rr at Tj = 25˚C and 100˚C; per diode Fig.6. Maximum I rrm at Tj = 25˚C and 100˚C; per diode. Fig.7. Typical and maximum forward characteristic I F = f(VF); parameter Tj Fig.8. Maximum Q s at Tj = 25˚C; per diode. Fig.9. Transient thermal impedance per diode Z th = f(tp) 1 10 trr / ns 110 100 1000 100 dIF/dt (A/us) IF=5 A 1A Tj = 25 C Tj = 100 C 1 10 100 1000 Qs / nC 1.0 10 100 -dIF/dt (A/us) IF = 2 A 5 A 10 1 0.1 0.01 Irrm / A 1 10 100 -dIF/dt (A/us) IF= 5 A IF=1A Tj = 25 C Tj = 100 C 1us 10us 100us 1ms 10ms 100ms 1s 10s 0.001 0.01 0.1 1 10 BYQ28E pulse width, tp (s) Transient thermal impedance, Zth j-mb (K/W) D = tp tp T T P t D 01 15 10 5 0 0.5 VF / V 1.5 IF / A typ Tj=150C Tj=25C BYQ28 max October 1998 3 Rev 1.400 |
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