DRV8411 datasheet(6/53 Pages) TI

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over operating temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

Operating junction temperature

–40

150

°C

(1)

Power dissipation and thermal limits must be observed

7.4 Thermal Information

THERMAL METRIC(1)

DEVICE

UNIT

PWP (HTSSOP)

RTE (WQFN)

PINS

RθJA

Junction-to-ambient thermal resistance

45.1

49.7

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

43.7

50.9

°C/W

RθJB

Junction-to-board thermal resistance

19.9

23.5

°C/W

ΨJT

Junction-to-top characterization parameter

2.6

1.7

°C/W

ΨJB

Junction-to-board characterization parameter

19.9

23.5

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

4.9

10.8

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

7.5 Electrical Characteristics

1.65 V ≤ VVM ≤ 11 V, –40°C ≤ TJ ≤ 150°C (unless otherwise noted). Typical values are at TJ = 27 °C and VVM = 5 V.

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

POWER SUPPLIES (VM)

IVMQ

VM sleep mode current

VVM = 5 V, TJ = 27°C

IVM

VM active mode current

xIN1 = 3.3 V, xIN2 = 0 V, VVM = 5 V

2.3

tWAKE

Turnon time

Sleep mode to active mode delay

100

μs

tAUTOSLEEP

Autosleep turnoff time

Active mode to autosleep mode delay

0.7

1.5

LOGIC-LEVEL INPUTS (nSLEEP, AIN1, AIN2, BIN1, BIN2)

VIL

Input logic low voltage

0.4

VIH

Input logic high voltage

1.45

5.5

VHYS_nSLEEP nSLEEP Input hysteresis

100

VHYS_logic

Logic Input hysteresis (except nSLEEP)

IIL

Input logic low current

VxINx = 0 V

-1

µA

IIH

Input logic high current

VxINx = 5 V

µA

RPD

Input pulldown resistance

100

kΩ

tDEGLITCH

Input logic deglitch

OPEN-DRAIN OUTPUTS (nFAULT)

VOL

Output logic low voltage

IOD = 5 mA

0.3

IOZ

Output logic high current

VOD = 5 V

-1

µA

DRIVER OUTPUTS (AOUT1, AOUT2, BOUT1, BOUT2)

RHS_DS(ON) High-side MOSFET on resistance

IOUTx = 0.2 A

200

mΩ

RLS_DS(ON)

Low-side MOSFET on resistance

IOUTx = -0.2 A

200

mΩ

VSD

Body diode forward voltage

IOUTx = -0.5 A

tRISE

Output rise time

VOUTx rising from 10% to 90% of VVM,

VVM = 5 V

100

tFALL

Output fall time

VOUTx falling from 90% to 10% of VVM,

VVM = 5 V

tPD

Input to output propagation delay

Input crosses 0.8 V to VOUTx = 0.1×VVM,

IOUTx = 1 A

600

DRV8411A

SLVSGI9A – OCTOBER 2022 – REVISED JULY 2023

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