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TLV755P

SBVS320A – NOVEMBER 2017 – REVISED MAY 2018

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(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

The absolute maximum rating is VIN + 0.3 V or 6.0 V, whichever is smaller

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Supply voltage, VIN

-0.3

6.0

V

Enable voltage, VEN

-0.3

6.0

V

Output voltage, VOUT

-0.3

VIN + 0.3

(2)

V

Operating junction temperature range, TJ

-40

150

°C

Storage temperature, Tstg

-65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with

less than 500-V HBM is possible with the necessary precautions.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with

less than 250-V CDM is possible with the necessary precautions.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±1000

V

Charged-device model (CDM), per JEDEC specification JESD22-

C101(2)

±500

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VIN

Input voltage

1.45

5.5

V

VOUT

Output voltage

0.6

5.0

V

VEN

Enable voltage

0

5.5

V

IOUT

Output current

0

500

mA

CIN

Input capacitor

1

μF

COUT

Output capacitor

1

200

μF

fEN

Enable toggle frequency

10

kHz

TJ

Junction temperature

–40

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.4 Thermal Information

THERMAL METRIC(1)

TLV755

UNIT

DQN (X2SON) DBV (SOT-23-

5)

DRV (SON)

4 PINS

5 PINS

6 PINS

RθJA

Junction-to-ambient thermal resistance

168.4

231.1

100.2

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

139.1

118.4

108.5

°C/W

RθJB

Junction-to-board thermal resistance

101.4

64.4

64.3

°C/W

ψJT

Junction-to-top characterization parameter

5.6

28.4

10.4

°C/W

ψJB

Junction-to-board characterization parameter

101.7

63.8

64.8

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

88.4

N/A

34.7

°C/W