Philips Semiconductors

Product specification

Rectifier diodes

BYV32 series

ultrafast

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Glass passivated high efficiency dual

SYMBOL

PARAMETER

MAX.

MAX.

MAX.

UNIT

rectifier diodes in a plastic envelope,

featuring low forward voltage drop,

BYV32-

100

150

200

ultra-fast recovery times and soft

V

RRM

Repetitive peak reverse

100

150

200

V

recovery characteristic. They are

voltage

intended for use in switched mode

V

F

Forward voltage

0.85

0.85

0.85

V

power supplies and high frequency

I

O(AV)

Output current (both

20

20

20

A

circuits

in

general

where

low

diodes conducting)

conduction and switching losses are

t

rr

Reverse recovery time

25

25

25

ns

essential.

PINNING - TO220AB

PIN CONFIGURATION

SYMBOL

PIN

DESCRIPTION

1

anode 1 (a)

2

cathode (k)

3

anode 2 (a)

tab

cathode (k)

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

-100

-150

-200

V

RRM

Repetitive peak reverse voltage

-

100

150

200

V

V

RWM

Crest working reverse voltage

-

100

150

200

V

V

R

Continuous reverse voltage

-

100

150

200

V

I

O(AV)

Output current (both diodes

square wave

-

20

A

conducting)

1

δ = 0.5; T

sinusoidal

-

18

A

a = 1.57; T

I

O(RMS)

RMS forward current

-

28

A

I

FRM

Repetitive peak forward current t = 25

µs; δ = 0.5;

-

20

A

per diode

T

I

FSM

Non-repetitive peak forward

t = 10 ms

-

125

A

current per diode

t = 8.3 ms

-

137

A

sinusoidal; with reapplied

V

RWM(max)

I

I

t = 10 ms

-

78

A

T

stg

Storage temperature

-40

150

˚C

T

j

Operating junction temperature

-

150

˚C

1 2 3

tab

k

a1

a2

1 Neglecting switching and reverse current losses

October 1994

1

Rev 1.100