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BYV32 Datasheet(PDF) 2 Page - NXP Semiconductors

Part # BYV32
Description  Rectifier diodes ultrafast
PDF  6 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYV32 Datasheet(HTML) 2 Page - NXP Semiconductors

  BYV32 Datasheet HTML 1Page - NXP Semiconductors BYV32 Datasheet HTML 2Page - NXP Semiconductors BYV32 Datasheet HTML 3Page - NXP Semiconductors BYV32 Datasheet HTML 4Page - NXP Semiconductors BYV32 Datasheet HTML 5Page - NXP Semiconductors BYV32 Datasheet HTML 6Page - NXP Semiconductors  
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Philips Semiconductors
Product specification
Rectifier diodes
BYV32 series
ultrafast
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance junction to
per diode
-
-
2.4
K/W
mounting base
both diodes conducting
-
-
1.6
K/W
R
th j-a
Thermal resistance junction to
in free air
-
60
-
K/W
ambient
STATIC CHARACTERISTICS
T
j = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
Forward voltage (per diode)
I
F = 8 A; Tj = 150˚C
-
0.72
0.85
V
I
F = 20 A
-
1.00
1.15
V
I
R
Reverse current (per diode)
V
R = VRWM; Tj = 100 ˚C
-
0.2
0.6
mA
V
R = VRWM
-
6
30
µA
DYNAMIC CHARACTERISTICS
T
j = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Q
s
Reverse recovery charge (per
I
F = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs
-
8
12.5
nC
diode)
t
rr
Reverse recovery time (per
I
F = 1 A; VR ≥ 30 V;
-
20
25
ns
diode)
-dI
F/dt = 100 A/µs
I
rrm
Peak reverse recovery current
I
F = 1 A; VR ≥ 30 V;
-
1.5
2
A
(per diode)
-dI
F/dt = 50 A/µs; Tj = 100 ˚C
V
fr
Forward recovery voltage (per
I
F = 1 A; dIF/dt = 10 A/µs
-
1
-
V
diode)
October 1994
2
Rev 1.100



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