CGY2032TS datasheet(4/12 Pages) PHILIPS

4 / 12 page

1999 Jul 21

Philips Semiconductors

Product speciﬁcation

DECT 500 mW power ampliﬁer

CGY2032TS

HANDLING

Do not operate or store near strong electrostatic fields. Meets class 1 ESD test requirements [Human Body Model

(HBM)], in accordance with

“MIL STD 883C - method 3015”.

THERMAL CHARACTERISTICS

Note

1. On Philips evaluation board, Rth(j-a) value is typically 80 K/W.

DC CHARACTERISTICS

Tamb =25 °C; unless otherwise speciﬁed.

AC CHARACTERISTICS

VDD = 3.2 V; fRF = 1900 MHz; Pi = 0 dBm; Tamb =25 °C; duty factor δ = 50%; 50 Ω impedance system; measured and

guaranteed on the CGY2032TS evaluation board; the circuit diagram is shown in Fig.5.

Note

1. The device is adjusted to provide nominal value of load power into a 50

Ω load. The device is switched off and a 6 : 1

load replaces the 50

Ω load. The device is switched on and the phase of the 6 : 1 load is varied

360 electrical degrees during a 60 seconds test period.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth(j-a)

thermal resistance from junction to ambient

in free air; note 1

145

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Pins VDD1,VDD2 and VDD3

VDD

positive supply voltage

1.8

3.2

4.2

IDD

positive peak supply current

VDD = 3.2 V

−−

800

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

input power

−5

dBm

duty factor

−

100

output power

26.5

27.5

dBm

IDD

total drain current

−−

500

efﬁciency

−

Pleak

RF leakage to output in power off state

VDD =0V

−−40

−35

dBm

second harmonic level

−−−30

dBc

third harmonic level

−−−35

dBc

Stab

stability (spurious levels)

note 1

−−60

−

dBc

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