1999 Jul 21

3

Philips Semiconductors

Product specification

DECT 500 mW power amplifier

CGY2032TS

PINNING

SYMBOL

PIN

DESCRIPTION

1

third stage supply voltage

GND3

2

third stage ground supply

GND3

3

third stage ground supply

GND3

4

third stage ground supply

5

second stage supply voltage

GND2

6

second stage ground supply

GND2

7

second stage ground supply

8

first stage supply voltage

n.c.

9

not connected

GND1

10

first stage ground supply

RFI

11

PA input

GND3

12

third stage ground supply

GND3

13

third stage ground supply

GND3

14

third stage ground supply

OPM

15

output pre-matching

RFO

16

PA output

Fig.2 Pin configuration.

handbook, halfpage

CGY2032TS

MGK734

1

2

3

4

5

6

7

8

16

15

14

13

12

11

10

9

VDD3

GND3

GND3

GND3

VDD2

GND2

GND2

VDD1

n.c.

GND1

RFI

GND3

GND3

GND3

OPM

RFO

FUNCTIONAL DESCRIPTION

Amplifier

The CGY2032TS is a 3-stage GaAs power amplifier

capable of delivering 500 mW (typ.) at 1.9 GHz into a 50

Ω

load. Each amplifier stage has an open-drain

configuration. The drains have to be loaded externally by

adequate reactive circuits which must also provide a DC

path to the supply.

The amplifier can be switched off by means of a single

external PNP or PMOS series switch connected between

the battery and the amplifier drains.

This switch can also be used to vary the actual supply

voltage applied to the amplifier and hence, control the

output power.

This device is specifically designed to work with a duty

factor of 50% and can work up to 100% with good thermal

performance printed-circuit boards.

Biasing

Internal biasing is provided inside the amplifier for

class AB operation.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Notes

1. On Philips evaluation board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

operating supply voltage

note 1

−

5.2

V

maximum operating junction temperature

−

150

°C

total power dissipation

note 2

−

450

mW

input power

−

15

dBm

storage temperature

−55

+125

°C