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CGY2032TS Datasheet(PDF) 2 Page - NXP Semiconductors |
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CGY2032TS Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 12 page ![]() 1999 Jul 21 2 Philips Semiconductors Product specification DECT 500 mW power amplifier CGY2032TS FEATURES • Power Amplifier (PA) overall efficiency 55% • 27.5 dBm saturated output power at 3.2 V • 0 dBm input power • 40 dB linear gain • Operation without negative supply • Wide operating temperature range −30 to +85 °C • SSOP16 package. APPLICATIONS • 1.88 to 1.9 GHz transceivers for DECT applications • 2 GHz transceivers [Personal Handy phone System (PHS), Digital Cellular System (DCS) and Personal Communication Services (PCS)]. GENERAL DESCRIPTION The CGY2032TS is a GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate from 3.6 V battery supply. No negative supply voltage is required for operation. QUICK REFERENCE DATA Note 1. For conditions, see Chapters “AC characteristics” and “DC characteristics”. ORDERING INFORMATION BLOCK DIAGRAM SYMBOL PARAMETER(1) MIN. TYP. MAX. UNIT VDD positive supply voltage − 3.2 − V IDD positive peak supply current − 350 − mA Po output power − 27.5 − dBm Tamb ambient temperature −30 − +85 °C TYPE NUMBER PACKAGE NAME DESCRIPTION VERSION CGY2032TS SSOP16 plastic shrink small outline package; 16 leads; body width 4.4 mm SOT369-1 Fig.1 Block diagram. handbook, halfpage MGK735 10 6, 7 2, 3, 4 12, 13, 14 11 85 16 15 1 RFI VDD1 GND1 GND2 GND3 VDD2 VDD3 RFO OPM CGY2032TS |
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