IRF640 datasheet(4/9 Pages) PHILIPS

4 / 9 page

Philips Semiconductors

Product specification

N-channel TrenchMOS

™ transistor

IRF640, IRF640S

Fig.1. Normalised power dissipation.

PD% = 100

⋅P

D/PD 25 ˚C = f(Tmb)

Fig.2. Normalised continuous drain current.

ID% = 100

⋅I

D/ID 25 ˚C = f(Tmb); VGS ≥ 10 V

Fig.3. Safe operating area

D & IDM = f(VDS); IDM single pulse; parameter tp

Fig.4. Transient thermal impedance.

th j-mb = f(t); parameter D = tp/T

Fig.5. Typical output characteristics, T

j = 25 ˚C.

D = f(VDS)

Fig.6. Typical on-state resistance, T

j = 25 ˚C.

DS(ON) = f(ID)

Normalised Power Derating, PD (%)

100

125

150

175

Mounting Base temperature, Tmb (C)

0.001

0.01

0.1

1E-06

1E-05

1E-04

1E-03

1E-02

1E-01

1E+00

Pulse width, tp (s)

Transient thermal impedance, Zth j-mb (K/W)

single pulse

D = 0.5

0.2

0.1

0.05

0.02

D = tp/T

Normalised Current Derating, ID (%)

100

125

150

175

Mounting Base temperature, Tmb (C)

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.8

Drain-Source Voltage, VDS (V)

Drain Current, ID (A)

Tj = 25 C

VGS = 10V

5 V

5.5 V

8 V

4.5 V

6 V

0.1

100

1000

Drain-Source Voltage, VDS (V)

Peak Pulsed Drain Current, IDM (A)

D.C.

100 ms

10 ms

RDS(on) = VDS/ ID

1 ms

tp = 10 us

100 us

0.05

0.1

0.15

0.2

0.25

0.3

1012

1416

1820

Drain Current, ID (A)

Drain-Source On Resistance, RDS(on) (Ohms)

VGS = 10V

Tj = 25 C

8 V

5.5 V

5 V

4.5 V

August 1999

Rev 1.100

IRF640 Datasheet(PDF) 4 Page - NXP Semiconductors

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