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2N65 Datasheet(PDF) 2 Page - Guangdong Youtai Semiconductor Co., Ltd.

Part # 2N65
Description  N-channel power MOS tube
PDF  11 Pages
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Manufacturer  UMW [Guangdong Youtai Semiconductor Co., Ltd.]
Direct Link  https://www.umw-ic.com/
Logo UMW - Guangdong Youtai Semiconductor Co., Ltd.

2N65 Datasheet(HTML) 2 Page - Guangdong Youtai Semiconductor Co., Ltd.

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参数
PARAMETER
PARAMETER
PARAMETER
PARAMETER
符号
SYMBOL
SYMBOL
SYMBOL
SYMBOL
测试条件
TEST
TEST
TEST
TEST CONDITION
CONDITION
CONDITION
CONDITION
最小值
MIN
MIN
MIN
MIN
典型值
TYP
TYP
TYP
TYP
最大值
MAX
MAX
MAX
MAX
单位
UNIT
UNIT
UNIT
UNIT
栅极漏电流
Gate-body Leakage
Current (VDS = 0)
IGSS
VGS =±30V
±100
nA
漏-源导通电阻
Static Drain-source On
Resistance
RDS(ON)
VGS =10V, ID=1.0A
③
③
③
③
4.5
5.5
Ω
输入电容
Input Capacitance
Ciss
VGS = 0V, VDS = 25V
F = 1.0MHZ
311
pF
关断延迟
Turn -Off Delay Time
Td(off)
VDD=300V, ID =2.0A
RG=25Ω
③
③
③
③
24
ns
栅极电荷
TotalGate Charge
Qg
ID =2.0A, VDS = 520V
VGS = 10V
③
③
③
③
14.5
nC
栅源电荷
Gate-to-Source Charge
Qgs
1.8
nC
栅漏电荷
Gate-to-Drain Charge
Qgd
8.3
nC
二极管正向电流
Continuous Diode Forward
Current
IS
2.0
A
二极管正向压降
Diode Forward Voltage
VSD
Tj=25°C, Is=2.0A
VGS =0V
③
③
③
③
1.4
V
反向恢复时间
Reverse Recovery Time
trr
Tj=25°C,If=2.0A
di/dt=100A/μs
③
③
③
③
368
ns
反向恢复电荷
Reverse Recovery Charge
Qrr
1.0
uC
注释((((Notes
Notes
Notes
Notes))))::::
①
①
①
① 脉冲宽度：以最高节温为限制
Repetitive rating: Pulse width limited by maximum junction temperature
②
②
②
② Starting Tj=25oC, VDD =50V, L=56mH, RG =25Ω, IAS=2.0A
③
③
③
③ 脉冲测试：脉冲宽度≤ 300μs ，占空比≤ 2 ％
Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%
UMW 2N65
N-
N-
N-
N-沟道功率 MOS
MOS
MOS
MOS 管
UMW
R
UMW 2N65
www.umw-ic.com
友台半导体有限公司
●热特性
●Thermal
Thermal
Thermal
Thermal Characteristics
Characteristics
Characteristics
Characteristics
参数
PARAMETER
PARAMETER
PARAMETER
PARAMETER
符号
SYMBOL
SYMBOL
SYMBOL
SYMBOL
最大值
MAX
MAX
MAX
MAX
单位
UNIT
UNIT
UNIT
UNIT
TO-220
TO-220
TO-220
TO-220
TO-220F
热阻结-壳
Thermal Resistance Junction-case
RthJC
2.31
4.46
℃/W
热阻结-环境
Thermal Resistance Junction-ambient
RthJA
62.5
62.5
℃/W
TO-220F
TO-220F
TO-220F



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