 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
2N65 Datasheet(PDF) 1 Page - Guangdong Youtai Semiconductor Co., Ltd. |
|
|
|||||||||||||||||||||||||||||
2N65 Datasheet(HTML) 1 Page - Guangdong Youtai Semiconductor Co., Ltd. |
|
|
1 / 11 page  UMW 2N65 ●最大额定值（TC=25 TC=25 TC=25 TC=25°°°°C C C C） ● ● ● ●Absolute Absolute Absolute Absolute Maximum Maximum Maximum Maximum Ratings Ratings Ratings Ratings（ （ （ （Tc=25 Tc=25 Tc=25 Tc=25°°°°C C C C） ） ） ） 参数 PARAMETER PARAMETER PARAMETER PARAMETER 符号 SYMBOL SYMBOL SYMBOL SYMBOL 额定值 VALUE VALUE VALUE VALUE 单位 UNIT UNIT UNIT UNIT 漏-源电压 Drain-source Voltage VDS 650 V 栅-源电压 gate-source Voltage VGS ±30 V 漏极电流 Continuous Drain Current TC=25℃ ID 2.0* A 漏极电流 Continuous Drain Current TC=100℃ ID 1.25* A 最大脉冲电流 Drain Current －Pulsed ① ① ① ① IDM 8.0* A 耗散功率 Power Dissipation Ptot W TO-220/220F SOT-223 最高结温 Junction Temperature Tj 150 ° C 存储温度 Storage Temperature TSTG -55-150 ° C 单脉冲雪崩能量 Single Pulse Avalanche Energy ② ② ② ② EAS 120 mJ *Drain current limited by maximum junction temperature ●电特性（Tc=25 Tc=25 Tc=25 Tc=25°°°°C C C C） ● ● ● ●Electronic Electronic Electronic Electronic Characteristics Characteristics Characteristics Characteristics（ （ （ （Tc=25 Tc=25 Tc=25 Tc=25°°°°C C C C） ） ） ） 参数 PARAMETER PARAMETER PARAMETER PARAMETER 符号 SYMBOL SYMBOL SYMBOL SYMBOL 测试条件 TEST TEST TEST TEST CONDITION CONDITION CONDITION CONDITION 最小值 MIN MIN MIN MIN 典型值 TYP TYP TYP TYP 最大值 MAX MAX MAX MAX 单位 UNIT UNIT UNIT UNIT 漏-源击穿电压 Drain-source Breakdown Voltage BVDSS VGS=0V, ID=250µA 650 V 击穿电压温度系数 Breakdown Voltage Temperature Coefficient ΔBVDSS/ ΔTj ID=250uA, Referenced to 25°C 0.6 V/°C 栅极开启电压 Gate Threshold Voltage VGS(TH) VGS=VDS, ID=250µA 2.0 4.0 V 漏-源漏电流 Drain-source Leakage Current IDSS VDS =650V, VGS =0V, Tj=25°C 25 µ A VDS =520V, VGS =0V, Tj=125°C 250 µA 跨导 Forward Transconductance gfs VDS =40V, ID=1A ③ ③ ③ ③ 1.5 S V V V VDS DS DS DS =650V =650V =650V =650V R R R RD D D DS S S S(ON) (ON) (ON) (ON) =5.5 =5.5 =5.5 =5.5Ω Ω Ω Ω IIIID D D D =2.0A =2.0A =2.0A =2.0A N- N- N- N-沟道功率 MOS MOS MOS MOS 管 UMW R UMW 2N65 1 www.umw-ic.com 友台半导体有限公司 SOT-223 TO-220/220F/251T/252/223 TO-251T/252 |
Similar Part No. - 2N65 |
|
Similar Description - 2N65 |
|
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
