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AM29LV640MU Datasheet(PDF) 44 Page - Advanced Micro Devices |
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AM29LV640MU Datasheet(HTML) 44 Page - Advanced Micro Devices |
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44 / 59 page  42 Am29LV640MU 25301C5 February 1, 2007 D A TA SH EE T AC CHARACTERISTICS Erase and Program Operations Notes: 1. Not 100% tested. 2. See the “Erase And Programming Performance” section for more information. 3. For 1–16 words programmed. 4. Effective write buffer specification is based upon a 16-word write buffer operation. 5. Word programming specification is based upon a single word programming operation not utilizing the write buffer. 6. AC specifications listed are tested with VIO = VCC. Contact AMD for information on AC operation with VIO ≠ VCC. 7. When using the program suspend/resume feature, if the suspend command is issued within tPOLL, tPOLL must be fully re-applied upon resuming the programming operation. If the suspend command is issued after tPOLL, tPOLL is not required again prior to reading the status bits upon resuming. Parameter Speed Options JEDEC Std. Description 90R 101 112 120 Unit t AVAV t WC Write Cycle Time (Note 1) Min 90 100 110 120 ns t AVWL t AS Address Setup Time Min 0 ns t ASO Address Setup Time to OE# low during toggle bit polling Min 15 ns tWLAX tAH Address Hold Time Min 45 ns tAHT Address Hold Time From CE# or OE# high during toggle bit polling Min 0 ns t DVWH t DS Data Setup Time Min 45 ns t WHDX t DH Data Hold Time Min 0 ns t OEPH Output Enable High during toggle bit polling Min 20 ns tGHWL tGHWL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns tELWL tCS CE# Setup Time Min 0 ns tWHEH tCH CE# Hold Time Min 0 ns tWLWH tWP Write Pulse Width Min 35 ns tWHDL tWPH Write Pulse Width High Min 30 ns tWHWH1 tWHWH1 Write Buffer Program Operation (Notes 2, 3) Typ 352 µs Effective Word Program Time, using the Write Buffer (Notes 2, 4) Typ 22 µs Effective Accelerated Word Program Time, using the Write Buffer (Notes 2, 4) Typ 17.6 µs Single Word Program Operation (Note 2, 5) Typ 100 µs Accelerated Single Word Programming Operation (Note 2, 5) Typ 90 µs tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ 0.5 sec tVHH VHH Rise and Fall Time (Note 1)Min 250 ns tVCS VCC Setup Time (Note 1) Min 50 µs tRB Write Recovery Time from RY/BY# Min 0 ns tBUSY WE# High to RY/BY# Low Max 90 100 110 120 ns tPOLL Program Valid Before Status Polling (Note 7)Max 4 µs |
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