AM29LV640MU datasheet(53/59 Pages) AMD

53 / 59 page

February 1, 2007 25301C5

Am29LV640MU

D A TA

SH EE T

ERASE AND PROGRAMMING PERFORMANCE

Notes:

1. Typical program and erase times assume the following conditions: 25

°C, 3.0 V V

CC. Programming specifications assume that

all bits are programmed to 00h.

2. Maximum values are measured at VCC = 3.0 V, worst case temperature. Maximum values are valid up to and including 100,000

program/erase cycles.

3. Word programming specification is based upon a single word programming operation not utilizing the write buffer.

4. For 1-16 words programmed in a single write buffer programming operation.

5. Effective write buffer specification is calculated on a per-word basis for a 16-word write buffer operation.

6. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.

7. System-level overhead is the time required to execute the command sequence(s) for the program command. See Table 10 for

further information on command definitions.

8. The device has a minimum erase and program cycle endurance of 100,000 cycles.

LATCHUP CHARACTERISTICS

Note: Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time.

Parameter

Typ (Note 1)

Max (Note 2)

Unit

Comments

Sector Erase Time

0.5

sec

Excludes 00h

programming prior to

erasure (Note 6)

Chip Erase Time

128

sec

Single Word Program Time (Note 3)

100

800

µs

Excludes system level

overhead (Note 7)

Accelerated Single Word Program Time (Note 3)

720

µs

Total Write Buffer Program Time (Note 4)

352

1800

µs

Effective Word Program Time, using the Write Buffer

(Note 5)

113

µs

Total Accelerated Write Buffer Program Time (Note 4)

282

1560

µs

Effective Accelerated Word Program Time, using the

Write Buffer (Note 4)

17.6

µs

Description

Min

Max

Input voltage with respect to V

SS on all pins except I/O pins

(including A9, OE#, and RESET#)

–1.0 V

12.5 V

Input voltage with respect to VSS on all I/O pins

–1.0 V

VCC + 1.0 V

VCC Current

–100 mA

+100 mA

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