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DL162 Datasheet(PDF) 51 Page - Advanced Micro Devices |
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DL162 Datasheet(HTML) 51 Page - Advanced Micro Devices |
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51 / 128 page ![]() February 6, 2004 Am42DL16x2D 49 AC CHARACTERISTICS Alternate CE#f Controlled Erase and Program Operations Notes: 1. Not 100% tested. 2. See the “Flash Erase And Programming Performance” section for more information. Parameter Speed Options JEDEC Std Description 70 85 Unit t AVAV t WC Write Cycle Time (Note 1) Min 70 85 ns t AVWL t AS Address Setup Time (WE# to Address) Min 0 ns t ASO Address Setup Time to CE#f Low During Toggle Bit Polling Min 15 ns t ELAX t AH Address Hold Time Min 45 ns t AHT Address Hold time from CE#f or OE# High During Toggle Bit Polling Min 0 ns tDVEH tDS Data Setup Time Min 35 ns tEHDX tDH Data Hold Time Min 0 ns t GHEL t GHEL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns t WLEL t WS WE# Setup Time Min 0 ns t EHWH t WH WE# Hold Time Min 0 ns t ELEH t CP CE#f Pulse Width Min 30 35 ns t EHEL t CPH CE#f Pulse Width High Min 30 35 ns t WHWH1 t WHWH1 Programming Operation (Note 2) Typ 7 µs t WHWH1 t WHWH1 Accelerated Programming Operation (Note 2) Typ 4 µs t WHWH2 t WHWH2 Sector Erase Operation (Note 2) Typ 0.7 sec |
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