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AM29LV640MH Datasheet(PDF) 56 Page - Advanced Micro Devices

Part # AM29LV640MH
Description  64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit??3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O??Control
PDF  62 Pages
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Manufacturer  AMD [Advanced Micro Devices]
Direct Link  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29LV640MH Datasheet(HTML) 56 Page - Advanced Micro Devices

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54
Am29LV640MH/L
December 14, 2005
DA TA SH EET
AC CHARACTERISTICS
Alternate CE# Controlled Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for
more information.
3. For 1–16 words/1–32 bytes programmed.
4. Effective write buffer specification is based upon a
16-word/32-byte write buffer operation.
5. Word/Byte programming specification is based upon a
single word/byte programming operation not utilizing the
write buffer.
6. AC Specifications listed are tested with V
IO = VCC. Contact
AMD for information on AC operation with V
IO ≠ VCC.
7. When using the program suspend/resume feature, if the
suspend command is issued within t
POLL, tPOLL must be fully
re-applied upon resuming the programming operation. If the
suspend command is issued after t
POLL, tPOLL is not
required again prior to reading the status bits upon
resuming.
Parameter
Speed Options
JEDEC
Std.
Description
90R
101,
101R
112,
112R
120,
120R
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
90
100
110
120
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ELAX
t
AH
Address Hold Time
Min
45
ns
t
DVEH
t
DS
Data Setup Time
Min
45
ns
t
EHDX
t
DH
Data Hold Time
Min
0
ns
t
GHEL
t
GHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
WLEL
t
WS
WE# Setup Time
Min
0
ns
t
EHWH
t
WH
WE# Hold Time
Min
0
ns
t
ELEH
t
CP
CE# Pulse Width
Min
45
ns
t
EHEL
t
CPH
CE# Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Write Buffer Program Operation (Notes 2, 3)
Typ
352
µs
Effective Write Buffer Program
Operation (Notes 2, 4)
Per Byte
Typ
11
µs
Per Word
Typ
22
µs
Accelerated Effective Write Buffer
Program Operation (Notes 2, 4)
Per Byte
Typ
8.8
µs
Per Word
Typ
17.6
µs
Single Word/Byte Program
Operation (Note 2, 5)
Byte
Typ
100
µs
Word
100
µs
Single Word/Byte Accelerated
Programming Operation (Note 2,
5)
Byte
Typ
90
µs
Word
90
µs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 7)
Typ
0.5
sec
t
RH
RESET# High Time Before Write
Min
50
ns
t
POLL
Program Valid Before Status Polling (Note 7)
Max
4
µs



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