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AM29LV640MH Datasheet(PDF) 61 Page - Advanced Micro Devices |
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AM29LV640MH Datasheet(HTML) 61 Page - Advanced Micro Devices |
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61 / 62 page ![]() December 14, 2005 Am29LV640MH/L 59 DA TA SH EET REVISION SUMMARY Revision A (March 19, 2002) Initial release as abbreviated Advance Information data sheet. This document contains information that was previously released in publication number 25301. Ordering Information The package marking for the Fortified BGA option has been updated. Physical Dimensions Added drawing that shows both TS056 and TSR056 specifications. Revision B (April 26, 2002) Expanded data sheet to full specification version. Revision C (May 23, 2002) Changed packaging from 63-ball FBGA to 64-ball For- tified BGA. Changed Block Diagram: Moved V IO from RY/BY# to Input/Output Buffers. Changed note about WP#/ACC pin to indicate internal pullup to V CC. Modi- fied Table 4: Sector Group Protection/Unprotection Ad- dress Table. Changed 47h Address data from 0004h to 0001h in Table 9. Revision D (August 8, 2002) Alternate CE# Controlled Erase and Program Operations Added tRH parameter to table. Erase and Program Operations Added tBUSY parameter to table. TSOP and BGA PIN Capacitance Added the FBGA package. Program Suspend/Program Resume Command Sequence Changed 15 μs typical to maximum and added 5 μs typical. Erase Suspend/Erase Resume Commands Changed typical from 20 μs to 5 μs and added a maxi- mum of 20 μs. Special package handling instructions Modified the special handling wording. DC Characteristics table Deleted the Iacc specification row. CFI Changed text in the third paragraph of CFI to read “reading array data.” Revision D+1 (September 10, 2002) Product Selector Guide Added Note 2. Ordering Information Added Note 1. Sector Erase Command Sequence Deleted statement that describes the outcome of when the Embedded Erase operation is in progress. Revision E (December 5, 2002) Product Selector Guide and Read-Only Characteristics Added a 30 ns option to t PACC and tOE standard for the 112R and 120R speed options. Customer Lockable: SecSi Sector NOT Programmed or Protected at the factory. Added second bullet, SecSi sector-protect verify text and figure 3. SecSi Sector Flash Memory Region, and Enter SecSi Sector/Exit SecSi Sector Command Sequence Noted that the ACC function and unlock bypass modes are not available when the SecSi sector is enabled. Byte/Word Program Command Sequence, Sector Erase Command Sequence, and Chip Erase Com- mand Sequence Noted that the SecSi Sector, autoselect, and CFI functions are unavailable when a program or erase operation is in progress. Common Flash Memory Interface (CFI) Changed CFI website address Figure 6. Program Suspend/Program Resume Change wait time to 15 μs. CMOS Compatible Added ILR row to table. Changed VIH1 and VIH2 mini- mum to 1.9. Removed typos in notes. Hardware Reset, CMOS Tables, Erase and Program Operations, Temporary Sector Unprotect, and Alternate CE# Controlled Erase and Program Operations Added Note. Revision E+1 (February 16, 2003) Distinctive Characteristics Corrected performance characteristics. |
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