MPSH10 datasheet(2/8 Pages) PHILIPS

2 / 8 page

1998 Aug 27

Philips Semiconductors

Product speciﬁcation

NPN 1 GHz general purpose switching transistor

MPSH10

FEATURES

• Low cost

• High power gain.

DESCRIPTION

Silicon NPN general purpose

transistor in a SOT54 (TO-92)

package. PNP complement is the

MPSH81.

PINNING

DESCRIPTION

collector

emitter

base

Fig.1 SOT54.

page

MSB033

Marking code: PSH10.

QUICK REFERENCE DATA

Note

1. Ts is the temperature at the soldering point of the collector lead, 4 mm from the body.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Ts is the temperature at the soldering point of the collector lead, 4 mm from the body.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

VCEO

collector-emitter voltage

open base

−

VEBO

emitter-base voltage

open collector

−

Ptot

total power dissipation

Ts =25 °C; note 1

−

junction temperature

−

150

°C

hFE

DC current gain

VCE =10V; IC =4mA

−

Cre

collector-emitter feedback capacitance

VCB =10V; IE = 0; f = 1 MHz

−

0.7

Crb

collector-base feedback capacitance

VCB =10V; IE = 0; f = 1 MHz

0.35

0.65

transition frequency

VCE =10V; IC = 4 mA;

f = 100 MHz; Tamb =25 °C

650

−

MHz

rbCc

collector-base time constant

VCE =10V; IC = 4 mA;

f = 100 MHz; Tamb =25 °C

−

9ps

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

VCEO

collector-emitter voltage

open base

−

VEBO

emitter-base voltage

open collector

−

collector current (DC)

−

Ptot

total power dissipation

Ts =25 °C; note 1

−

Tstg

storage temperature

−65

+150

°C

junction temperature

−

150

°C

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