Philips Semiconductors

Product specification

NE/SA5209

Wideband variable gain amplifier

2

1990 Aug 20

853-1453 00223

DESCRIPTION

The NE5209 represents a breakthrough in monolithic amplifier

design featuring several innovations. This unique design has

combined the advantages of a high speed bipolar process with the

proven Gilbert architecture.

The NE5209 is a linear broadband RF amplifier whose gain is

controlled by a single DC voltage. The amplifier runs off a single 5

volt supply and consumes only 40mA. The amplifier has high

impedance (1k

Ω) differential inputs. The output is 50Ω differential.

Therefore, the 5209 can simultaneously perform AGC, impedance

transformation, and the balun functions.

The dynamic range is excellent over a wide range of gain setting.

Furthermore, the noise performance degrades at a comparatively

slow rate as the gain is reduced. This is an important feature when

building linear AGC systems.

FEATURES

PIN CONFIGURATION

N, D PACKAGES

OUTA

VCC1

INA

VCC2

GND1

GND1

GND2

1

2

3

4

5

6

7

8

9

10

11

12

13

14

16

15

INB

GND1

VBG

VAGC

OUTB

GND2

GND2

GND2

SR00237

Figure 1. Pin Configuration

APPLICATIONS

ORDERING INFORMATION

DESCRIPTION

TEMPERATURE RANGE

ORDER CODE

DWG #

16-Pin Plastic Small Outline (SO) package

0 to +70

NE5209D

SOT109-1

16-Pin Plastic Dual In-Line Package (DIP)

0 to +70

°C

NE5209N

SOT28-4

16-Pin Plastic Small Outline (SO) package

-40 to +85

°C

SA5209D

SOT109-1

16-Pin Plastic Dual In-Line Package (DIP)

-40 to +85

°C

SA5209N

SOT28-4