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ISG2045 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # ISG2045
Description  NPT Trench IGBT
PDF  4 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISG2045 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  ISG2045 Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISG2045 Datasheet HTML 2Page - Inchange Semiconductor Company Limited ISG2045 Datasheet HTML 3Page - Inchange Semiconductor Company Limited ISG2045 Datasheet HTML 4Page - Inchange Semiconductor Company Limited  
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ISG2045
eq FGA25N120ANTD
NPT Trench IGBT
www.iscsemi.com
2
ELECTRICAL CHARACTERISTICS（TJ = 25 °C unless otherwise specified）
SYMBOL
PARAMETER
CONDITIONS
MIN
TYPE
MAX
UNIT
VCES
Collector-Emitter Breakdown
Voltage
VGE=0, IC= 1mA
1200
--
--
V
VGE(th)
Gate-Emitter Threshold Voltage
VGE= VCE, IC=25mA
3.5
5.5
7.5
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 25A,
VCE=15V
TC=25℃
--
2.0
2.5
V
TC=175℃
--
2.2
--
V
IC= 50A, VCE=15V
--
2.7
--
V
ICES
Zero Gate Voltage Collector Current
VCE=1200V, VGE=0
--
--
3
mA
IGES
Gate-Emitter Leakage Current
VGE=±20V, VCE=0
--
--
±
250
nA
Cies
Input Capacitance
VGS = 0V,
VCS = 30V,
f = 1.0MHz
--
3700
--
pF
Coes
Output Capacitance
--
130
--
Cres
Reverse Transfer Capacitance
--
80
--
Qg
Total Gate Charge
VGE = 15V,
IC=25A,
VCE = 600V
--
200
--
nC
Qge
Gate-Emitter Charge
--
15
--
Qgc
Gate-Collector Charge
--
100
--
td(on)
Turn-on Delay Time
VGE = 15V,
IC= 25A,
VCE = 600V,
RG= 10Ω
TC=25℃
--
50
--
ns
tr
Turn-on Rise Time
--
60
--
ns
td(off)
Turn-off Delay Time
--
200
--
ns
tf
Turn-off Fall Time
--
155
--
ns
Eon
Turn-on switching losses
--
4.5
--
mJ
Eoff
Turn-off switching losses
--
1.5
--
mJ
Ets
Total Switching Loss
--
5.8
--
mJ



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