QPC2511

2.0 to 11.0 GHz High Power GaN SP3T Switch

Data Sheet Rev B. June 08, 2020 | Subject to change without notice

16 of 25

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Performance Plots

 – Large Signal (TX-S)

Notes:

RFC = Port1; RF1 = Port 2 = RX; RF2 = Port 3 = TX-X; RF3 = Port4 = TX-S. See Logic table on Page 21 for Voltage controls

-1.6

-1.4

-1.2

-1.0

-0.8

-0.6

-0.4

-0.2

0.0

30

33

36

39

42

45

Input Power (dBm)

TX-S: Insertion Loss vs. PIN vs. Temp.

-40C

+25C

+85C

Pulsed RF: PW = 300µs; DC = 25%

Freq. = 3 GHz

TX-S = RF3 = ON: VC1 = -30 V, VC2 = 0 V

-0.4

-0.2

0.0

0.2

0.4

0.6

0.8

1.0

30

33

36

39

42

45

Input Power (dBm)

TX-S: Gate Current (IC) vs. PIN vs. Temp.

-40C

+25C

+85C

Pulsed RF: PW = 300µs; DC = 20%

Freq. = 3 GHz

TX-S = RF3 = ON: VC1 = -30 V, VC2 = 0 V

-1.6

-1.4

-1.2

-1.0

-0.8

-0.6

-0.4

-0.2

0.0

30

33

36

39

42

45

Input Power (dBm)

TX-S: Insertion Loss vs. PIN vs. Temp.

-40C

+25C

+85C

Pulsed RF: PW = 300µs; DC = 25%

Freq. = 3.5 GHz

TX-S = RF3 = ON: VC1 = -30 V, VC2 = 0 V

-0.4

-0.2

0.0

0.2

0.4

0.6

0.8

1.0

30

33

36

39

42

45

Input Power (dBm)

TX-S: Gate Current (IC) vs. PIN vs. Temp.

-40C

+25C

+85C

Pulsed RF: PW = 300µs; DC = 20%

Freq. = 3.5 GHz

TX-S = RF3 = ON: VC1 = -30 V, VC2 = 0 V

-2.0

-1.8

-1.6

-1.4

-1.2

-1.0

-0.8

-0.6

-0.4

30

33

36

39

42

45

Input Power (dBm)

TX-S: Insertion Loss vs. PIN vs. Temp.

-40C

+25C

+85C

Pulsed RF: PW = 300µs; DC = 25%

Freq. = 4 GHz

TX-S = RF3 = ON: VC1 = -30 V, VC2 = 0 V

-0.4

-0.2

0.0

0.2

0.4

0.6

0.8

1.0

30

33

36

39

42

45

Input Power (dBm)

TX-S: Gate Current (IC) vs. PIN vs. Temp.

-40C

+25C

+85C

Pulsed RF: PW = 300µs; DC = 20%

Freq. = 4 GHz

TX-S = RF3 = ON: VC1 = -30 V, VC2 = 0 V