QPC2511

2.0 to 11.0 GHz High Power GaN SP3T Switch

Data Sheet Rev B. June 08, 2020 | Subject to change without notice

2 of 25

www.qorvo.com

®

Recommended Operating Conditions

Parameter

Min

Typ.

Max

Units

VC1

0/-30

V

VC2

-30/0

V

Control Voltage

Range

-22

-30

–

V

Temperature Range

-40

+25

+85

°C

Electrical specifications are measured at specified test conditions.

Specifications are not guaranteed over all recommended operating

conditions.

Absolute Maximum Ratings

Parameter

Rating

Control Voltage (VC)

−40 V

Control Current (IC)

10.0 mA

Power Dissipation, 85 °C

5 W

Input Power (PIN), Pulsed, 3:1 VSWR,

RX Mode, TBASE = 85 °C

40 dBm

Input Power (PIN), Pulsed, 3:1 VSWR,

TX Mode, TBASE = 85 °C

45 dBm

Mounting Temperature (30 sec)

260 °C

Storage Temperature

−55 to 150 °C

Exceeding any one or a combination of the Absolute Maximum Rating

conditions may cause permanent damage to the device. Extended

application of Absolute Maximum Rating conditions to the device may

reduce device reliability.

Thermal and Reliability Information

Parameter

Test Conditions

Value

Units

Thermal Resistance (θJC) (1,2)

TBASE = 85 °C, VC1 = -30 V, VC2 = 0 V, TX Mode

Pulsed RF: PW = 300µ, DC = 25%

Freq. = 3.0 GHz, PIN = 45 dBm, PDISS = 1.76 W

4.45

ºC/W

Channel Temperature (TCH) (1,2)

93

°C

Thermal Resistance (θJC) (1,2)

TBASE = 85 °C, VC1 = -30 V, VC2 = 0 V, TX Mode

Pulsed RF: PW = 300µ, DC = 25%

Freq. = 10.0 GHz, PIN = 45 dBm, PDISS = 2.0 W

5.0

ºC/W

Channel Temperature (TCH) (1,2)

95

°C

Notes:

1. Measured to the back of the package at (85 °C)

2. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates