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TAS5162DDVR Datasheet(PDF) 10 Page - Texas Instruments

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Part # TAS5162DDVR
Description  2 x 210 Watt STEREO DIGITAL AMPLIFIER POWER STAGE
PDF  29 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

TAS5162DDVR Datasheet(HTML) 10 Page - Texas Instruments

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ELECTRICAL CHARACTERISTICS
TAS5162
SLES194C – OCTOBER 2006 – REVISED MAY 2007
R
L= 6 Ω, FPWM = 384 kHz, unless otherwise noted. All performance is in accordance with recommended operating conditions
unless otherwise specified.
TAS5162
PARAMETER
TEST CONDITIONS
UNIT
MIN
TYP
MAX
Internal Voltage Regulator and Current Consumption
Voltage regulator, only used as a
VREG
VDD = 12 V
2.95
3.3
3.65
V
reference node
Operating, 50% duty cycle
10
IVDD
VDD supply current
mA
Idle, reset mode
6
50% duty cycle
8
IGVDD_X
Gate supply current per half-bridge
mA
Reset mode
0.3
50% duty cycle, without output filter or load
15
mA
IPVDD_X
Half-bridge idle current
Reset mode, no switching
500
µA
Output Stage MOSFETs
TJ = 25°C, includes metallization resistance,
RDSon,LS
Drain-to-source resistance, LS
90
m
Ω
GVDD = 12 V
TJ = 25°C, includes metallization resistance,
RDSon,HS
Drain-to-source resistance, HS
90
m
Ω
GVDD = 12 V
I/O Protection
Undervoltage protection limit,
Vuvp,G
8.5
V
GVDD_X
Vuvp,hyst(1)
400
mV
OTW(1)
Overtemperature warning
115
125
135
°C
Temperature drop needed below
OTWHYST(1)
OTW temp. for OTW to be inactive
25
°C
after the OTW event
OTE(1)
Overtemperature error
145
155
165
°C
OTE-
OTE-OTW differential
25
°C
OTWdifferential(1)
A reset needs to occur for SD for be
OTEHYST(1)
25
°C
released following an OTE event.
OLPC
Overload protection counter
FPWM = 384 kHz
1.3
ms
Resistor—programmable, nominal,
IOC
Overcurrent limit protection
12
A
ROCP = 22 kΩ
IOCT
Overcurrent response time
Time from application of short condition to
250
ns
Hi-Z of affected 1/2 bridge
ROCP
OC programming resistor range
Resistor tolerance = 5%
22
69
k
Ω
Connected when RESET is active to provide
Internal pulldown resistor at the
RPD
bootstrap capacitor charge. Not used in SE
1.0
k
Ω
output of each half-bridge
mode
Static Digital Specifications
VIH
High-level input voltage
2
V
PWM_A, PWM_B, PWM_C, PWM_D, M1,
M2, M3, RESET_AB, RESET_CD
VIL
Low-level input voltage
0.8
V
Leakage
Input leakage current
-100
100
µA
OTW/SHUTDOWN (SD)
Internal pullup resistance, OTW to
RINT_PU
20
26
35
k
Ω
VREG, SD to VREG
Internal pullup resistor
2.95
3.3
3.65
VOH
High-level output voltage
V
External pullup of 4.7 k
Ω to 5 V
4.5
5
VOL
Low-level output voltage
IO = 4 mA
0.2
0.4
V
FANOUT
Device fanout OTW, SD
No external pullup
30
Devices
(1)
Specified by design
10
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