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TAS5162DDVR Datasheet(PDF) 10 Page - Texas Instruments |
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TAS5162DDVR Datasheet(HTML) 10 Page - Texas Instruments |
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10 / 29 page ![]() www.ti.com ELECTRICAL CHARACTERISTICS TAS5162 SLES194C – OCTOBER 2006 – REVISED MAY 2007 R L= 6 Ω, FPWM = 384 kHz, unless otherwise noted. All performance is in accordance with recommended operating conditions unless otherwise specified. TAS5162 PARAMETER TEST CONDITIONS UNIT MIN TYP MAX Internal Voltage Regulator and Current Consumption Voltage regulator, only used as a VREG VDD = 12 V 2.95 3.3 3.65 V reference node Operating, 50% duty cycle 10 IVDD VDD supply current mA Idle, reset mode 6 50% duty cycle 8 IGVDD_X Gate supply current per half-bridge mA Reset mode 0.3 50% duty cycle, without output filter or load 15 mA IPVDD_X Half-bridge idle current Reset mode, no switching 500 µA Output Stage MOSFETs TJ = 25°C, includes metallization resistance, RDSon,LS Drain-to-source resistance, LS 90 m Ω GVDD = 12 V TJ = 25°C, includes metallization resistance, RDSon,HS Drain-to-source resistance, HS 90 m Ω GVDD = 12 V I/O Protection Undervoltage protection limit, Vuvp,G 8.5 V GVDD_X Vuvp,hyst(1) 400 mV OTW(1) Overtemperature warning 115 125 135 °C Temperature drop needed below OTWHYST(1) OTW temp. for OTW to be inactive 25 °C after the OTW event OTE(1) Overtemperature error 145 155 165 °C OTE- OTE-OTW differential 25 °C OTWdifferential(1) A reset needs to occur for SD for be OTEHYST(1) 25 °C released following an OTE event. OLPC Overload protection counter FPWM = 384 kHz 1.3 ms Resistor—programmable, nominal, IOC Overcurrent limit protection 12 A ROCP = 22 kΩ IOCT Overcurrent response time Time from application of short condition to 250 ns Hi-Z of affected 1/2 bridge ROCP OC programming resistor range Resistor tolerance = 5% 22 69 k Ω Connected when RESET is active to provide Internal pulldown resistor at the RPD bootstrap capacitor charge. Not used in SE 1.0 k Ω output of each half-bridge mode Static Digital Specifications VIH High-level input voltage 2 V PWM_A, PWM_B, PWM_C, PWM_D, M1, M2, M3, RESET_AB, RESET_CD VIL Low-level input voltage 0.8 V Leakage Input leakage current -100 100 µA OTW/SHUTDOWN (SD) Internal pullup resistance, OTW to RINT_PU 20 26 35 k Ω VREG, SD to VREG Internal pullup resistor 2.95 3.3 3.65 VOH High-level output voltage V External pullup of 4.7 k Ω to 5 V 4.5 5 VOL Low-level output voltage IO = 4 mA 0.2 0.4 V FANOUT Device fanout OTW, SD No external pullup 30 Devices (1) Specified by design 10 Submit Documentation Feedback |
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