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Datasheet, Public

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[v2-00] 2023-Jan-04

TMD2635 − Electrical Characteristics

Note(s):

1. Values are shown at the VDD pin and do not include current through the IR VCSEL.

2. Active state occurs when PON = 1 and the device is actively integrating. This time is determined by the number of pulses (PPULSE)

and the pulse length (PULSE_LEN) according to the formula: (7 x PULSE_LEN) + PPULSE x (2 x PULSE_LEN + 22μs) + 78.75μs.

3. Idle state occurs when PON = 1 and the device is not in the active state.

4. Sleep state occurs when PON = 0 and I²C bus is idle. If sleep state has been entered as the result of operational flow, SAI = 1, PON

will remain high.

5. Digital pins: SDA, SCL, INT are tolerant to a communication voltage up to 3.4V.

Figure 8:

Near Proximity Photodiode Optical Characteristics, VDD = 1.8V, VDD =3.0V, TA = 25ºC (unless

otherwise noted)

Note(s):

1. Representative result by characterization.

2. 3 sigma (σ) variation.

3. Response with no target varies with power supply characteristics and system noise.

TWakeup

Time for device to wakeup from the

sleep state and enter the active

state if both PON and PEN are set to

one at the same time.

100

μs

TActive

Time from power-on to ready to

receive I²C commands

1.5

ms

Parameter

Conditions

Min

Typ

Max

Unit

Response: Absolute (1)

PGAIN = 1x

PLDRIVE = 7mA

PPULSE = 5 pulses

PPULSE_LEN = 12μs

APC = disabled

TEST9 = 0x07

BINSRCH_TARGET = 31

Post Calibration

Target material: 18% reflective

surface

No glass above module

Target Size: 100mm x 100mm

Target Distance: 10mm

292

389

486

counts

Part to Part Variation (1)(2)

Same as Response: absolute

±25

%

Noise (1)(2)

Same as Response: absolute

±2

%

Response: No target (1)(3)

Same as Response: absolute

except no target above the

module

19

30

41

counts

Symbol

Parameter

Conditions

Min

Typ

Max

Units